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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by MPS6520/D COLLECTOR 3 2 BASE NPN MPS6520 * MPS6521 1 EMITTER PNP MPS6523 Voltage and current are negative for PNP transistors *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector - Emitter Voltage MPS6520, MPS6521 MPS6523 Collector - Base Voltage MPS6520, MPS6521 MPS6523 Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO 25 -- VCBO 40 -- VEBO IC PD PD TJ, Tstg 4.0 100 625 5.0 1.5 12 - 55 to +150 -- 25 Vdc mAdc mW mW/C Watts mW/C C -- 25 Vdc 1 2 3 NPN PNP Unit Vdc CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) MPS6520, MPS6521 MPS6523 V(BR)CEO V(BR)EBO ICBO -- -- 0.05 0.05 25 4.0 -- -- Vdc Vdc mAdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 NPN MPS6520 MPS6521 PNP MPS6523 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) hFE MPS6520 MPS6521 MPS6520 MPS6521 MPS6523 MPS6523 VCE(sat) 100 150 200 300 150 300 -- -- -- 400 600 -- 600 0.5 Vdc -- (IC = 2.0 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) Collector - Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) SMALL- SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k , Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz) Cobo NF -- -- 3.5 3.0 pF dB 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN MPS6520 MPS6521 PNP MPS6523 NPN MPS6520, MPS6521 EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% - 0.5 V <1.0 ns +10.9 V 10 k 275 10 < t1 < 500 s DUTY CYCLE = 2% 0 + 3.0 V t1 +10.9 V 10 k 275 CS < 4.0 pF* - 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* *Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time Figure 2. Turn-Off Time TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 A BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 A 10 A IC = 1.0 mA 300 A 100 A BANDWIDTH = 1.0 Hz RS 10 7.0 5.0 10 A 3.0 100 A 30 A Figure 3. Noise Voltage Figure 4. Noise Current Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 NPN MPS6520 MPS6521 PNP MPS6523 NPN MPS6520, MPS6521 NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25C) 500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) BANDWIDTH = 1.0 Hz 2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k Figure 5. Narrow Band, 100 Hz Figure 6. Narrow Band, 1.0 kHz 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 10 Hz to 15.7 kHz Noise Figure is defined as: NF 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) + 20 log10 en2 ) 4KTRS ) In 2RS2 1 2 IC, COLLECTOR CURRENT (A) Figure 7. Wideband 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN MPS6520 MPS6521 PNP MPS6523 NPN MPS6520, MPS6521 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125C h FE, DC CURRENT GAIN 200 25C - 55C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C IC, COLLECTOR CURRENT (mA) 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 100 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% IB = 500 A 400 A 300 A 0.6 60 200 A 40 100 A 20 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 9. Collector Saturation Region Figure 10. Collector Characteristics TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 0.8 *APPLIES for IC/IB hFE/2 25C to 125C 0 *qVC for VCE(sat) - 55C to 25C - 0.8 25C to 125C - 1.6 qVB for VBE - 2.4 0.1 0.2 - 55C to 25C 50 100 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltages Figure 12. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 NPN MPS6520 MPS6521 PNP MPS6523 NPN MPS6520, MPS6521 TYPICAL DYNAMIC CHARACTERISTICS 300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts t, TIME (ns) VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 13. Turn-On Time f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 14. Turn-Off Time 500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V 10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current-Gain -- Bandwidth Product Figure 16. Capacitance 20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA Figure 17. Input Impedance 6 Figure 18. Output Admittance Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN MPS6520 MPS6521 PNP MPS6523 NPN MPS6520, MPS6521 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 500 1.0 k 2.0 k Figure 19. Thermal Response 104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find Z JA(t), multiply the value obtained from Figure 19 by the steady state value RJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) Figure 19A. 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms 100 s 10 s 1.0 s TC = 25C TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT dc The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon T J(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 20. Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 NPN MPS6520 MPS6521 PNP MPS6523 PNP MPS6523 TYPICAL NOISE CHARACTERISTICS (VCE = - 5.0 Vdc, TA = 25C) 10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA BANDWIDTH = 1.0 Hz RS Figure 21. Noise Voltage Figure 22. Noise Current NOISE FIGURE CONTOURS (VCE = - 5.0 Vdc, TA = 25C) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k Figure 23. Narrow Band, 100 Hz 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k Figure 24. Narrow Band, 1.0 kHz RS , SOURCE RESISTANCE (OHMS) 10 Hz to 15.7 kHz Noise Figure is Defined as: NF 0.5 dB + 20 log10 en2 ) 4KTRS ) In 2RS2 1 2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) Figure 25. Wideband 8 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN MPS6520 MPS6521 PNP MPS6523 PNP MPS6523 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125C 25C h FE, DC CURRENT GAIN 200 - 55C 100 80 60 40 0.003 0.005 MPS390 VCE = 1.0 V 6 VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 Figure 26. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (mA) TA = 25C MPS3906 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 100 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 300 A 60 IB = 400 A 350 A 250 A 200 A 150 A 0.6 0.4 40 100 A 50 A 0.2 20 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 27. Collector Saturation Region Figure 28. Collector Characteristics TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 - 55C to 25C 0.8 25C to 125C 1.6 25C to 125C qVB for VBE 0.2 - 55C to 25C 2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 29. "On" Voltages Figure 30. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data 9 NPN MPS6520 MPS6521 PNP MPS6523 PNP MPS6523 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 -1.0 ts VCC = - 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) tf 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 31. Turn-On Time f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 32. Turn-Off Time 500 TJ = 25C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF) 10 TJ = 25C 7.0 Cib 5.0 3.0 2.0 Cob 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 33. Current-Gain -- Bandwidth Product Figure 34. Capacitance 20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS3905 hfe 100 @ IC = -1.0 mA MPS3906 hfe 200 @ IC = -1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = -10 Vdc f = 1.0 kHz TA = 25C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPS3906 hfe 200 @ IC = 1.0 mA MPS3905 hfe 100 @ IC = 1.0 mA Figure 35. Input Impedance 10 Figure 36. Output Admittance Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN MPS6520 MPS6521 PNP MPS6523 PNP MPS6523 TYPICAL DYNAMIC CHARACTERISTICS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 500 1.0 k 2.0 k Figure 37. Thermal Response 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25C 1.0 ms 100 s dc TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 s 1.0 s The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon T J(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 40 Figure 38. Active-Region Safe Operating Area 104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find Z JA(t), multiply the value obtained from Figure 17 by the steady state value RJA. Example: The MPS3905 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. ICBO AND ICEX @ VBE(off) = 3.0 V -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) Figure 39. Typical Collector Leakage Current Motorola Small-Signal Transistors, FETs and Diodes Device Data 11 NPN MPS6520 MPS6521 PNP MPS6523 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 12 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS6520/D *MPS6520/D* |
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